 | 2011 |
|---|
| 7 |       | L. Lachéze,
O. Latry,
P. Dherbécourt,
K. Mourgues,
V. Purohit,
H. Maanane,
J. P. Sipma,
F. Cornu,
Ph. Eudeline:
Characterization and modeling of hot carrier injection in LDMOS for L-band radar application.
Microelectronics Reliability 51(8): 1289-1294 (2011) |
| 6 | | M. A. Belaïd,
M. Gares,
K. Daoud,
Ph. Eudeline:
S-parameter performance degradation in power RF N-LDMOS devices due to hot carrier effects.
Microelectronics Reliability 51(9-11): 1551-1556 (2011) |
| 2010 |
|---|
| 5 | | O. Latry,
P. Dherbécourt,
K. Mourgues,
H. Maanane,
J. P. Sipma,
F. Cornu,
Ph. Eudeline,
M. Masmoudi:
A 5000 h RF life test on 330 W RF-LDMOS transistors for radars applications.
Microelectronics Reliability 50(9-11): 1574-1576 (2010) |
| 2007 |
|---|
| 4 | | M. Gares,
M. A. Belaïd,
H. Maanane,
M. Masmoudi,
J. Marcon,
K. Mourgues,
Ph. Eudeline:
Study of hot-carrier effects on power RF LDMOS device reliability.
Microelectronics Reliability 47(9-11): 1394-1399 (2007) |
| 2006 |
|---|
| 3 | | M. Gares,
H. Maanane,
M. A. Belaïd,
M. Masmoudi,
J. Marcon,
K. Mourgues,
P. Bertram,
Ph. Eudeline:
Impact de la Temperature sur la Fiabilite des Composants rf Ldmos de Puissance.
CCECE 2006: 382-385 |
| 2 | | H. Maanane,
M. Masmoudi,
J. Marcon,
M. A. Belaïd,
K. Mourgues,
C. Tolant,
K. Ketata,
Ph. Eudeline:
Study of RF N- LDMOS critical electrical parameter drifts after a thermal and electrical ageing in pulsed RF.
Microelectronics Reliability 46(5-6): 994-1000 (2006) |
| 1 | | M. Gares,
H. Maanane,
M. Masmoudi,
P. Bertram,
J. Marcon,
M. A. Belaïd,
K. Mourgues,
C. Tolant,
Ph. Eudeline:
Hot carrier reliability of RF N- LDMOS for S Band radar application.
Microelectronics Reliability 46(9-11): 1806-1811 (2006) |
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