 | 2009 |
| 14 |  | Adrien Ille,
Wolfgang Stadler,
Thomas Pompl,
Harald Gossner,
Tilo Brodbeck,
Kai Esmark,
Philipp Riess,
David Alvarez,
Kiran V. Chatty,
Robert Gauthier,
Alain Bravaix:
Reliability aspects of gate oxide under ESD pulse stress.
Microelectronics Reliability 49(12): 1407-1416 (2009) |
| 13 |  | David Alvarez,
Kiran V. Chatty,
Christian Russ,
Michel J. Abou-Khalil,
Junjun Li,
Robert Gauthier,
Kai Esmark,
Ralph Halbach,
Christopher Seguin:
Design optimization of gate-silicided ESD NMOSFETs in a 45 nm bulk CMOS technology.
Microelectronics Reliability 49(12): 1417-1423 (2009) |
| 12 |  | Michael Heer,
Krzysztof Domanski,
Kai Esmark,
Ulrich Glaser,
Dionyz Pogany,
Erich Gornik,
Wolfgang Stadler:
Transient interferometric mapping of carrier plasma during external transient latch-up phenomena in latch-up test structures and I/O cells processed in CMOS technology.
Microelectronics Reliability 49(12): 1455-1464 (2009) |
| 11 |  | Tilo Brodbeck,
Kai Esmark,
Wolfgang Stadler:
CDM tests on interface test chips for the verification of ESD protection concepts.
Microelectronics Reliability 49(12): 1470-1475 (2009) |
| 2007 |
| 10 |  | Ulrich Glaser,
Kai Esmark,
Martin Streibl,
Christian Russ,
Krzysztof Domanski,
Mauro Ciappa,
Wolfgang Fichtner:
SCR operation mode of diode strings for ESD protection.
Microelectronics Reliability 47(7): 1044-1053 (2007) |
| 2005 |
| 9 |  | Wolfgang Stadler,
Kai Esmark,
K. Reynders,
M. Zubeidat,
M. Graf,
Wolfgang Wilkening,
J. Willemen,
N. Qu,
S. Mettler,
M. Etherton:
Test circuits for fast and reliable assessment of CDM robustness of I/O stages.
Microelectronics Reliability 45(2): 269-277 (2005) |
| 8 |  | S. Bargstädt-Franke,
Wolfgang Stadler,
Kai Esmark,
Martin Streibl,
Krzysztof Domanski,
Horst A. Gieser,
Heinrich Wolf,
W. Bala:
Transient latch-up: experimental analysis and device simulation.
Microelectronics Reliability 45(2): 297-304 (2005) |
| 7 |  | Martin Streibl,
F. Zängl,
Kai Esmark,
Robert Schwencker,
Wolfgang Stadler,
Harald Gossner,
S. Drüen,
Doris Schmitt-Landsiedel:
High abstraction level permutational ESD concept analysis.
Microelectronics Reliability 45(2): 313-321 (2005) |
| 2003 |
| 6 |  | Martin Streibl,
Kai Esmark,
A. Sieck,
Wolfgang Stadler,
M. Wendel,
J. Szatkowski,
Harald Gossner:
Harnessing the base-pushout effect for ESD protection in bipolar and BiCMOS technologies.
Microelectronics Reliability 43(7): 1001-1010 (2003) |
| 2002 |
| 5 |  | Wolfgang Stadler,
Kai Esmark,
Harald Gossner,
Martin Streibl,
M. Wendel,
Wolfgang Fichtner,
Dionyz Pogany,
Martin Litzenberger,
Erich Gornik:
Device Simulation and Backside Laser Interferometry--Powerful Tools for ESD Protection Development.
Microelectronics Reliability 42(9-11): 1267-1274 (2002) |
| 4 |  | F. Zängl,
Harald Gossner,
Kai Esmark,
R. Owen,
G. Zimmermann:
Case study of a technology transfer causing ESD problems.
Microelectronics Reliability 42(9-11): 1275-1280 (2002) |
| 2001 |
| 3 |  | Kai Esmark,
Wolfgang Stadler,
M. Wendel,
Harald Gossner,
X. Guggenmos,
Wolfgang Fichtner:
Advanced 2D/3D ESD device simulation - a powerful tool already used in a pre-Si phase.
Microelectronics Reliability 41(11): 1761-1770 (2001) |
| 2 |  | Harald Gossner,
T. Müller-Lynch,
Kai Esmark,
Matthias Stecher:
Wide range control of the sustaining voltage of electrostatic discharge protection elements realized in a smart power technology.
Microelectronics Reliability 41(3): 385-393 (2001) |
| 1 |  | Martin Litzenberger,
R. Pichler,
Sergey Bychikhin,
Dionyz Pogany,
Erich Gornik,
Kai Esmark,
Harald Gossner:
Effect of pulse risetime on trigger homogeneity in single finger grounded gate nMOSFET electrostatic discharge protection devices.
Microelectronics Reliability 41(9-10): 1385-1390 (2001) |