 | 2009 |
|---|
| 6 |       | Yoshino K. Fukai,
Kenji Kurishima,
Norihide Kashio,
Minoru Ida,
Shoji Yamahata,
Takatomo Enoki:
Emitter-metal-related degradation in InP-based HBTs operating at high current density and its suppression by refractory metal.
Microelectronics Reliability 49(4): 357-364 (2009) |
| 2006 |
|---|
| 5 | | Takatomo Enoki:
Special Section on Heterostructure Microelectronics with TWHM2005.
IEICE Transactions 89-C(7): 873 (2006) |
| 4 | | Hideaki Matsuzaki,
Takashi Maruyama,
Takatomo Enoki,
Masami Tokumitsu:
Novel Fabrication Technology for High Yield Sub-100-nm-Gate InP-Based HEMTs.
IEICE Transactions 89-C(7): 949-953 (2006) |
| 3 | | Koji Inafune,
Eiichi Sano,
Hideaki Matsuzaki,
Toshihiko Kosugi,
Takatomo Enoki:
W-Band Active Integrated Antenna Oscillator Based on Full-Wave Design Methodology and 0.1-µm Gate InP-Based HEMTs.
IEICE Transactions 89-C(7): 954-958 (2006) |
| 2004 |
|---|
| 2 | | Hideaki Matsuzaki,
Hiroki Sugiyama,
Haruki Yokoyama,
Takashi Kobayashi,
Takatomo Enoki:
Suppression of short-channel effect in pseudomorphic In0.25Al0.75P/In0.75Ga0.25As high electron mobility transistors.
IEICE Electronic Express 1(11): 292-297 (2004) |
| 1 | | Hideaki Matsuzaki,
Kimikazu Sano,
Takatomo Enoki:
Low-power and High-speed SCFL-inverter Using Pseudomorphic InGaAs Channel High Electron Mobility Transistors.
IEICE Electronic Express 1(2): 24-28 (2004) |
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