I. Eisele

	2005
3		V. Capodieci, F. Wiest, T. Sulima, J. Schulze, I. Eisele: Examination and evaluation of La2O3 as gate dielectric for sub-100nm CMOS and DRAM technology. Microelectronics Reliability 45(5-6): 937-940 (2005)
	2001
2		G. Shrivastav, S. Mahapatra, V. Ramgopal Rao, J. Vasi, K. G. Anil, C. Fink, Walter Hansch, I. Eisele: erformance Optimization Of 60 Nm Channel Length Vertical Mosfets Using Channel Engineering. VLSI Design 2001: 475-478
1		A. Stadler, I. Genchev, A. Bergmaier, G. Dollinger, V. Petrova-Koch, Walter Hansch, H. Baumgärtner, I. Eisele: Nitrogen implantations for rapid thermal oxinitride layers. Microelectronics Reliability 41(7): 977-980 (2001)

Coauthor Index

1	K. G. Anil	[2]
2	H. Baumgärtner	[1]
3	A. Bergmaier	[1]
4	V. Capodieci	[3]
5	G. Dollinger	[1]
6	C. Fink	[2]
7	I. Genchev	[1]
8	Walter Hansch	[1] [2]
9	S. Mahapatra	[2]
10	V. Petrova-Koch	[1]
11	V. Ramgopal Rao	[2]
12	J. Schulze	[3]
13	G. Shrivastav	[2]
14	A. Stadler	[1]
15	T. Sulima	[3]
16	J. Vasi	[2]
17	F. Wiest	[3]

Colors in the list of coauthors

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