J. K. Efavi

	2007
2		S. Abermann, J. K. Efavi, G. Sjöblom, M. C. Lemme, J. Olsson, Emmerich Bertagnolli: Impact of Al-, Ni-, TiN-, and Mo-metal gates on MOCVD-grown HfO2 and ZrO2 high-kappa dielectrics. Microelectronics Reliability 47(4-5): 536-539 (2007)
	2005
1		M. C. Lemme, J. K. Efavi, H. D. B. Gottlob, T. Mollenhauer, T. Wahlbrink, H. Kurz: Comparison of metal gate electrodes on MOCVD HfO2. Microelectronics Reliability 45(5-6): 953-956 (2005)

Coauthor Index

1	S. Abermann	[2]
2	Emmerich Bertagnolli	[2]
3	H. D. B. Gottlob	[1]
4	H. Kurz	[1]
5	M. C. Lemme	[1] [2]
6	T. Mollenhauer	[1]
7	J. Olsson	[2]
8	G. Sjöblom	[2]
9	T. Wahlbrink	[1]

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