 | 2012 |
|---|
| 5 |       | Behrouz Afzal,
Behzad Ebrahimi,
Ali Afzali-Kusha,
Massoud Pedram:
An accurate analytical I-V model for sub-90-nm MOSFETs and its application to read static noise margin modeling.
Journal of Zhejiang University - Science C 13(1): 58-70 (2012) |
| 2011 |
|---|
| 4 | | Behzad Ebrahimi,
Masoud Rostami,
Ali Afzali-Kusha,
Massoud Pedram:
Statistical Design Optimization of FinFET SRAM Using Back-Gate Voltage.
IEEE Trans. VLSI Syst. 19(10): 1911-1916 (2011) |
| 3 | | Mehdi Saremi,
Behzad Ebrahimi,
Ali Afzali-Kusha,
Saeed Mohammadi:
A partial-SOI LDMOSFET with triangular buried-oxide for breakdown voltage improvement.
Microelectronics Reliability 51(12): 2069-2076 (2011) |
| 2008 |
|---|
| 2 | | Behzad Ebrahimi,
Saeed Zeinolabedinzadeh,
Ali Afzali-Kusha:
Low Standby Power and Robust FinFET Based SRAM Design.
ISVLSI 2008: 185-190 |
| 2007 |
|---|
| 1 | | Behzad Ebrahimi,
Scott D. Swanson,
Timothy E. Chupp:
The effect of noise and depolarization on hyperpolarized tracers perfusion assessment.
ISBI 2007: 137-140 |
Data released under the ODC-BY 1.0 license — See also our legal information page