 | 2009 |
|---|
| 7 |       | N. Malbert,
Nathalie Labat,
A. Curutchet,
C. Sury,
V. Hoel,
J.-C. de Jaeger,
N. Defrance,
Y. Douvry,
Christian Dua,
Mourad Oualli,
C. Bru-Chevallier,
J.-M. Bluet,
W. Chikhaoui:
Characterisation and modelling of parasitic effects and failure mechanisms in AlGaN/GaN HEMTs.
Microelectronics Reliability 49(9-11): 1216-1221 (2009) |
| 6 | | Michele Piazza,
Christian Dua,
Mourad Oualli,
Erwan Morvan,
Dominique Carisetti,
Frédéric Wyczisk:
Degradation of TiAlNiAu as ohmic contact metal for GaN HEMTs.
Microelectronics Reliability 49(9-11): 1222-1225 (2009) |
| 2007 |
|---|
| 5 | | M. Faqir,
G. Verzellesi,
Fausto Fantini,
Francesca Danesin,
F. Rampazzo,
Gaudenzio Meneghesso,
Enrico Zanoni,
Anna Cavallini,
Antonio Castaldini,
Nathalie Labat,
André Touboul,
Christian Dua:
Characterization and analysis of trap-related effects in AlGaN-GaN HEMTs.
Microelectronics Reliability 47(9-11): 1639-1642 (2007) |
| 2006 |
|---|
| 4 | | A. Sozza,
A. Curutchet,
Christian Dua,
N. Malbert,
Nathalie Labat,
André Touboul:
AlGaN/GaN HEMT Reliability Assessment by means of Low Frequency Noise Measurements.
Microelectronics Reliability 46(9-11): 1725-1730 (2006) |
| 2005 |
|---|
| 3 | | A. Sozza,
Christian Dua,
Erwan Morvan,
B. Grimber,
S. L. Delage:
A 3000 hours DC Life Test on AlGaN/GaN HEMT for RF and microwave applications.
Microelectronics Reliability 45(9-11): 1617-1621 (2005) |
| 2004 |
|---|
| 2 | | A. Sozza,
Christian Dua,
A. Kerlain,
C. Brylinski,
Enrico Zanoni:
Long-term reliability of Ti-Pt-Au metallization system for Schottky contact and first-level metallization on SiC MESFET.
Microelectronics Reliability 44(7): 1109-1113 (2004) |
| 2003 |
|---|
| 1 | | S. L. Delage,
Christian Dua:
Wide band gap semiconductor reliability : Status and trends.
Microelectronics Reliability 43(9-11): 1705-1712 (2003) |
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