 | 2012 |
| 4 |  | E. Marcault,
M. Breil,
A. Bourennane,
P. Tounsi,
J. M. Dorkel:
Study of mechanical stress impact on the I-V characteristics of a power VDMOS device using 2D FEM simulations.
Microelectronics Reliability 52(3): 489-496 (2012) |
| 2009 |
| 3 |  | B. Bernoux,
R. Escoffier,
P. Jalbaud,
J. M. Dorkel:
Source electrode evolution of a low voltage power MOSFET under avalanche cycling.
Microelectronics Reliability 49(9-11): 1341-1345 (2009) |
| 2005 |
| 2 |  | B. Khong,
P. Tounsi,
Ph. Dupuy,
X. Chauffleur,
M. Legros,
A. Deram,
C. Levade,
G. Vanderschaeve,
J. M. Dorkel,
J. P. Fradin:
Innovative Methodology for Predictive Reliability of Intelligent Power Devices Using Extreme Electro-thermal Fatigue.
Microelectronics Reliability 45(9-11): 1717-1722 (2005) |
| 2002 |
| 1 |  | O. Perat,
J. M. Dorkel,
E. Scheid,
Pierre Temple-Boyer,
Y. S. Chung,
A. Peyre-Lavigne,
M. Zecri,
P. Tounsi:
Characterization method of thermomechanical parameters for microelectronic materials.
Microelectronics Reliability 42(7): 1053-1058 (2002) |