 | 2007 |
| 3 |  | Z. Li,
T. Schram,
L. Pantisano,
A. Stesmans,
Thierry Conard,
S. Shamuilia,
V. V. Afanasiev,
A. Akheyar,
Sven Van Elshocht,
D. P. Brunco,
W. Deweerd,
Y. Naoki,
P. Lehnen,
Stefan De Gendt,
K. De Meyer:
Mechanism of O2-anneal induced Vfb shifts of Ru gated stacks.
Microelectronics Reliability 47(4-5): 518-520 (2007) |
| 2005 |
| 2 |  | T. Schram,
L.-Å. Ragnarsson,
G. Lujan,
W. Deweerd,
J. Chen,
W. Tsai,
K. Henson,
R. J. P. Lander,
J. C. Hooker,
J. Vertommen:
Performance improvement of self-aligned HfO2/TaN and SiON/TaN nMOS transistors.
Microelectronics Reliability 45(5-6): 779-782 (2005) |
| 1 |  | W. Deweerd,
Vidya Kaushik,
J. Chen,
Y. Shimamoto,
T. Schram,
L.-Å. Ragnarsson,
Annelies Delabie,
L. Pantisano,
B. Eyckens,
J. W. Maes:
Potential remedies for the VT/Vfb-shift problem of Hf/polysilicon-based gate stacks: a solution-based survey.
Microelectronics Reliability 45(5-6): 786-789 (2005) |