J. C. DeJaeger

	2006
1		N. Sghaier, M. Trabelsi, N. Yacoubi, J. M. Bluet, A. Souifi, G. Guillot, C. Gaquière, J. C. DeJaeger: Traps centers and deep defects contribution in current instabilities for AlGaN/GaN HEMT's on silicon and sapphire substrates. Microelectronics Journal 37(4): 363-370 (2006)

Coauthor Index

1	J. M. Bluet	[1]
2	C. Gaquière	[1]
3	G. Guillot	[1]
4	N. Sghaier	[1]
5	A. Souifi (Abdelkader Souifi)	[1]
6	M. Trabelsi	[1]
7	N. Yacoubi	[1]

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