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G. Currò Coauthor index pubzone.org

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DBLP keys2010
8Electronic Edition pubzone.org CiteSeerX Google scholar BibTeX bibliographical record in XMLG. Busatto, G. Currò, Francesco Iannuzzo, A. Porzio, A. Sanseverino, Francesco Velardi: Experimental study and numerical investigation on the formation of single event gate damages induced on medium voltage power MOSFET. Microelectronics Reliability 50(9-11): 1842-1847 (2010)
2009
7Electronic Edition pubzone.org CiteSeerX Google scholar BibTeX bibliographical record in XMLG. Busatto, G. Currò, Francesco Iannuzzo, A. Porzio, A. Sanseverino, F. Velardi: Experimental study about gate oxide damages in patterned MOS capacitor irradiated with heavy ions. Microelectronics Reliability 49(9-11): 1033-1037 (2009)
2008
6Electronic Edition pubzone.org CiteSeerX Google scholar BibTeX bibliographical record in XMLG. Busatto, G. Currò, Francesco Iannuzzo, A. Porzio, A. Sanseverino, F. Velardi: Experimental evidence of "latent gate oxide damages" in medium voltage power MOSFET as a result of heavy ions exposure. Microelectronics Reliability 48(8-9): 1306-1309 (2008)
2007
5Electronic Edition pubzone.org CiteSeerX Google scholar BibTeX bibliographical record in XMLA. Cascio, G. Currò, A. Cavagnoli: Total ionizing dose reliability of thin SiO2 in PowerMOSFET devices. Microelectronics Reliability 47(4-5): 815-818 (2007)
4Electronic Edition pubzone.org CiteSeerX Google scholar BibTeX bibliographical record in XMLF. Monforte, M. Camalleri, D. Calì, G. Currò, E. Fazio, F. Neri: Nitrogen bonding configurations near the oxynitride/silicon interface after oxynitridation in N2O ambient of a thin SiO2 gate. Microelectronics Reliability 47(4-5): 822-824 (2007)
2006
3Electronic Edition pubzone.org CiteSeerX Google scholar BibTeX bibliographical record in XMLG. Busatto, Francesco Iannuzzo, A. Porzio, A. Sanseverino, F. Velardi, G. Currò: Experimental study of power MOSFET's gate damage in radiation environment. Microelectronics Reliability 46(9-11): 1854-1857 (2006)
2005
2Electronic Edition pubzone.org CiteSeerX Google scholar BibTeX bibliographical record in XMLG. Busatto, A. Porzio, F. Velardi, Francesco Iannuzzo, A. Sanseverino, G. Currò: Experimental and Numerical investigation about SEB/SEGR of Power MOSFET. Microelectronics Reliability 45(9-11): 1711-1716 (2005)
2003
1Electronic Edition pubzone.org CiteSeerX Google scholar BibTeX bibliographical record in XMLF. Velardi, Francesco Iannuzzo, G. Busatto, J. Wyss, A. Sanseverino, A. Candelori, G. Currò, A. Cascio, F. Frisina: Reliability of Medium Blocking Voltage Power VDMOSFET in Radiation Environment. Microelectronics Reliability 43(9-11): 1847-1851 (2003)

Coauthor Index

1Giovanni Busatto (G. Busatto) [1] [2] [3] [6] [7] [8]
2D. Calì [4]
3M. Camalleri [4]
4A. Candelori [1]
5A. Cascio [1] [5]
6A. Cavagnoli [5]
7E. Fazio [4]
8F. Frisina [1]
9Francesco Iannuzzo [1] [2] [3] [6] [7] [8]
10F. Monforte [4]
11F. Neri [4]
12A. Porzio [2] [3] [6] [7] [8]
13A. Sanseverino [1] [2] [3] [6] [7] [8]
14Francesco Velardi (F. Velardi) [1] [2] [3] [6] [7] [8]
15J. Wyss [1]

Colors in the list of coauthors

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