 | 2010 |
| 8 |  | G. Busatto,
G. Currò,
Francesco Iannuzzo,
A. Porzio,
A. Sanseverino,
Francesco Velardi:
Experimental study and numerical investigation on the formation of single event gate damages induced on medium voltage power MOSFET.
Microelectronics Reliability 50(9-11): 1842-1847 (2010) |
| 2009 |
| 7 |  | G. Busatto,
G. Currò,
Francesco Iannuzzo,
A. Porzio,
A. Sanseverino,
F. Velardi:
Experimental study about gate oxide damages in patterned MOS capacitor irradiated with heavy ions.
Microelectronics Reliability 49(9-11): 1033-1037 (2009) |
| 2008 |
| 6 |  | G. Busatto,
G. Currò,
Francesco Iannuzzo,
A. Porzio,
A. Sanseverino,
F. Velardi:
Experimental evidence of "latent gate oxide damages" in medium voltage power MOSFET as a result of heavy ions exposure.
Microelectronics Reliability 48(8-9): 1306-1309 (2008) |
| 2007 |
| 5 |  | A. Cascio,
G. Currò,
A. Cavagnoli:
Total ionizing dose reliability of thin SiO2 in PowerMOSFET devices.
Microelectronics Reliability 47(4-5): 815-818 (2007) |
| 4 |  | F. Monforte,
M. Camalleri,
D. Calì,
G. Currò,
E. Fazio,
F. Neri:
Nitrogen bonding configurations near the oxynitride/silicon interface after oxynitridation in N2O ambient of a thin SiO2 gate.
Microelectronics Reliability 47(4-5): 822-824 (2007) |
| 2006 |
| 3 |  | G. Busatto,
Francesco Iannuzzo,
A. Porzio,
A. Sanseverino,
F. Velardi,
G. Currò:
Experimental study of power MOSFET's gate damage in radiation environment.
Microelectronics Reliability 46(9-11): 1854-1857 (2006) |
| 2005 |
| 2 |  | G. Busatto,
A. Porzio,
F. Velardi,
Francesco Iannuzzo,
A. Sanseverino,
G. Currò:
Experimental and Numerical investigation about SEB/SEGR of Power MOSFET.
Microelectronics Reliability 45(9-11): 1711-1716 (2005) |
| 2003 |
| 1 |  | F. Velardi,
Francesco Iannuzzo,
G. Busatto,
J. Wyss,
A. Sanseverino,
A. Candelori,
G. Currò,
A. Cascio,
F. Frisina:
Reliability of Medium Blocking Voltage Power VDMOSFET in Radiation Environment.
Microelectronics Reliability 43(9-11): 1847-1851 (2003) |