 | 2011 |
| 6 |  | M. Lofrano,
K. Croes,
Ingrid De Wolf,
C. J. Wilson:
Influence of test structure design on stress-induced-voiding using an experimentally validated Finite Element Modeling approach.
Microelectronics Reliability 51(9-11): 1578-1581 (2011) |
| 5 |  | Ingrid De Wolf,
K. Croes,
O. Varela Pedreira,
Riet Labie,
A. Redolfi,
M. Van De Peer,
K. Vanstreels,
C. Okoro,
Bart Vandevelde,
Eric Beyne:
Cu pumping in TSVs: Effect of pre-CMP thermal budget.
Microelectronics Reliability 51(9-11): 1856-1859 (2011) |
| 2002 |
| 4 |  | E. Andries,
R. Dreesen,
K. Croes,
Ward De Ceuninck,
Luc De Schepper,
Guido Groeseneken,
K. F. Lo,
Marc D'Olieslaeger,
Jan D'Haen:
Statistical aspects of the degradation of LDD nMOSFETs.
Microelectronics Reliability 42(9-11): 1409-1413 (2002) |
| 3 |  | Stefano Aresu,
Ward De Ceuninck,
R. Dreesen,
K. Croes,
E. Andries,
J. Manca,
Luc De Schepper,
Robin Degraeve,
Ben Kaczer,
Marc D'Olieslaeger:
High-resolution SILC measurements of thin SiO2 at ultra low voltages.
Microelectronics Reliability 42(9-11): 1485-1489 (2002) |
| 2001 |
| 2 |  | R. Dreesen,
K. Croes,
J. Manca,
Ward De Ceuninck,
Luc De Schepper,
A. Pergoot,
Guido Groeseneken:
A new degradation model and lifetime extrapolation technique for lightly doped drain nMOSFETs under hot-carrier degradation.
Microelectronics Reliability 41(3): 437-443 (2001) |
| 1 |  | K. Croes,
R. Dreesen,
J. Manca,
Ward De Ceuninck,
Luc De Schepper,
L. Tielemans,
P. van Der Wel:
High-resolution in-situ of gold electromigration: test time reduction.
Microelectronics Reliability 41(9-10): 1439-1442 (2001) |