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| 2001 | ||
|---|---|---|
| 2 | A. C. Lamb, J. F. W. Schiz, J. M. Bonar, F. Cristiano, P. Ashburn, S. Hall, P. L. F. Hemment: Characterisation of emitter/base leakage currents in SiGe HBTs produced using selective epitaxy. Microelectronics Reliability 41(2): 273-279 (2001) | |
| 1 | Laurent Jalabert, Pierre Temple-Boyer, Gérard Sarrabayrouse, F. Cristiano, B. Colombeau, F. Voillot, C. Armand: Reduction of boron penetration through thin silicon oxide with a nitrogen doped silicon layer. Microelectronics Reliability 41(7): 981-985 (2001) | |
| 1 | C. Armand | [1] |
| 2 | P. Ashburn | [2] |
| 3 | J. M. Bonar | [2] |
| 4 | B. Colombeau | [1] |
| 5 | S. Hall | [2] |
| 6 | P. L. F. Hemment | [2] |
| 7 | Laurent Jalabert | [1] |
| 8 | A. C. Lamb | [2] |
| 9 | Gérard Sarrabayrouse | [1] |
| 10 | J. F. W. Schiz | [2] |
| 11 | Pierre Temple-Boyer | [1] |
| 12 | F. Voillot | [1] |
Colors in the list of coauthors
Last update Tue May 29 01:28:40 2012 CET by the DBLP Team —
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