Thierry Conard

	2007
3		Z. Li, T. Schram, L. Pantisano, A. Stesmans, Thierry Conard, S. Shamuilia, V. V. Afanasiev, A. Akheyar, Sven Van Elshocht, D. P. Brunco, W. Deweerd, Y. Naoki, P. Lehnen, Stefan De Gendt, K. De Meyer: Mechanism of O2-anneal induced Vfb shifts of Ru gated stacks. Microelectronics Reliability 47(4-5): 518-520 (2007)
2		A. Rothschild, R. Mitsuhashi, C. Kerner, X. Shi, J. L. Everaert, L. Date, Thierry Conard, Olivier Richard, C. Vrancken, R. Verbeeck, A. Veloso, A. Lauwers, M. de Potter de ten Broeck, I. Debusschere, M. Jurczak, M. Niwa, P. Absil, S. Biesemans: Optimization of HfSiON using a design of experiment (DOE) approach on 0.45 V Vt Ni-FUSI CMOS transistors. Microelectronics Reliability 47(4-5): 521-524 (2007)
	2005
1		Vidya Kaushik, Martine Claes, Annelies Delabie, Sven Van Elshocht, Olivier Richard, Thierry Conard, Erika Rohr, Thomas Witters, Matty Caymax, Stefan De Gendt: Observation and characterization of defects in HfO2 high-K gate dielectric layers. Microelectronics Reliability 45(5-6): 798-801 (2005)

Coauthor Index

1	P. Absil	[2]
2	V. V. Afanasiev	[3]
3	A. Akheyar	[3]
4	S. Biesemans	[2]
5	M. de Potter de ten Broeck	[2]
6	D. P. Brunco	[3]
7	Matty Caymax	[1]
8	Martine Claes	[1]
9	L. Date	[2]
10	I. Debusschere	[2]
11	Annelies Delabie	[1]
12	W. Deweerd	[3]
13	Sven Van Elshocht	[1] [3]
14	J. L. Everaert	[2]
15	Stefan De Gendt	[1] [3]
16	M. Jurczak	[2]
17	Vidya Kaushik	[1]
18	C. Kerner	[2]
19	A. Lauwers	[2]
20	P. Lehnen	[3]
21	Z. Li	[3]
22	K. De Meyer	[3]
23	R. Mitsuhashi	[2]
24	Y. Naoki	[3]
25	M. Niwa	[2]
26	L. Pantisano	[3]
27	Olivier Richard	[1] [2]
28	Erika Rohr	[1]
29	A. Rothschild	[2]
30	T. Schram	[3]
31	S. Shamuilia	[3]
32	X. Shi	[2]
33	A. Stesmans	[3]
34	A. Veloso	[2]
35	R. Verbeeck	[2]
36	C. Vrancken	[2]
37	Thomas Witters	[1]

Last update Tue May 29 20:41:18 2012 CET by the DBLP Team — Data released under the ODC-BY 1.0 license — See also our legal information page