 | 2012 |
| 14 |  | Valeria Kilchytska,
Joaquín Alvarado,
S. Put,
Nadine Collaert,
Eddy Simoen,
Cor Claeys,
O. Militaru,
G. Berger,
Denis Flandre:
High-energy neutrons effect on strained and non-strained SOI MuGFETs and planar MOSFETs.
Microelectronics Reliability 52(1): 118-123 (2012) |
| 13 |  | Renan Trevisoli Doria,
João Antonio Martino,
Eddy Simoen,
Cor Claeys,
Marcelo Antonio Pavanello:
An analytic method to compute the stress dependence on the dimensions and its influence in the characteristics of triple gate devices.
Microelectronics Reliability 52(3): 519-524 (2012) |
| 2007 |
| 12 |  | Paula Ghedini Der Agopian,
João Antonio Martino,
Eddy Simoen,
Cor Claeys:
Study of the linear kink effect in PD SOI nMOSFETs.
Microelectronics Journal 38(1): 114-119 (2007) |
| 11 |  | Kerem Akarvardar,
Abdelkarim Mercha,
Eddy Simoen,
Vaidyanathan Subramanian,
Cor Claeys,
Pierre Gentil,
Sorin Cristoloveanu:
High-temperature performance of state-of-the-art triple-gate transistors.
Microelectronics Reliability 47(12): 2065-2069 (2007) |
| 10 |  | Paolo Srinivasan,
Felice Crupi,
Eddy Simoen,
Paolo Magnone,
Calogero Pace,
D. Misra,
Cor Claeys:
Interfacial layer quality effects on low-frequency noise (1/f) in p-MOSFETs with advanced gate stacks.
Microelectronics Reliability 47(4-5): 501-504 (2007) |
| 2006 |
| 9 |  | Paula Ghedini Der Agopian,
João Antonio Martino,
Eddy Simoen,
Cor Claeys:
Impact of the twin-gate structure on the linear kink effect in PD SOI nMOSFETS.
Microelectronics Journal 37(8): 681-685 (2006) |
| 8 |  | L. M. Camillo,
João Antonio Martino,
Eddy Simoen,
Cor Claeys:
The temperature mobility degradation influence on the zero temperature coefficient of partially and fully depleted SOI MOSFETs.
Microelectronics Journal 37(9): 952-957 (2006) |
| 7 |  | J. M. Rafí,
Eddy Simoen,
K. Hayama,
Abdelkarim Mercha,
F. Campabadal,
H. Ohyama,
Cor Claeys:
Hot-carrier-induced degradation of drain current hysteresis and transients in thin gate oxide floating body partially depleted SOI nMOSFETs.
Microelectronics Reliability 46(9-11): 1657-1663 (2006) |
| 6 |  | K. Hayama,
K. Takakura,
K. Shigaki,
H. Ohyama,
J. M. Rafí,
Abdelkarim Mercha,
Eddy Simoen,
Cor Claeys:
Impact on the back gate degradation in partially depleted SOI n-MOSFETs by 2-MeV electron irradiation.
Microelectronics Reliability 46(9-11): 1731-1735 (2006) |
| 2005 |
| 5 |  | K. Hayama,
K. Takakura,
H. Ohyama,
S. Kuboyama,
S. Matsuda,
J. M. Rafí,
Abdelkarim Mercha,
Eddy Simoen,
Cor Claeys:
Radiation source dependence of performance degradation in thin gate oxide fully-depleted SOI n-MOSFETs.
Microelectronics Reliability 45(9-11): 1376-1381 (2005) |
| 2004 |
| 4 |  | Cor Claeys:
Technological Challenges of Advanced CMOS Processing and Their Impact on Design Aspects.
VLSI Design 2004: 275- |
| 2001 |
| 3 |  | H. Ohyama,
Eddy Simoen,
S. Kuroda,
Cor Claeys,
Y. Takami,
T. Hakata,
K. Kobayashi,
M. Nakabayashi,
H. Sunaga:
Degradation and recovery of AlGaAs/GaAs p-HEMT irradiated by high-energy particle.
Microelectronics Reliability 41(1): 79-85 (2001) |
| 2 |  | M. Nakabayashi,
H. Ohyama,
Eddy Simoen,
M. Ikegami,
Cor Claeys,
K. Kobayashi,
M. Yoneoka,
K. Miyahara:
Reliability of polycrystalline silicon thin film resistors.
Microelectronics Reliability 41(9-10): 1341-1346 (2001) |
| 1 |  | H. Ohyama,
M. Nakabayashi,
Eddy Simoen,
Cor Claeys,
T. Tanaka,
T. Hirao,
S. Onada,
K. Kobayashi:
Radiation damages of polycrystalline silicon films and npn Si transistors by high-energy particle irradiation.
Microelectronics Reliability 41(9-10): 1443-1448 (2001) |