Alessandro Chini

	2010
2		Valerio Di Lecce, Michele Esposto, Matteo Bonaiuti, Gaudenzio Meneghesso, Enrico Zanoni, Fausto Fantini, Alessandro Chini: Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress. Microelectronics Reliability 50(9-11): 1523-1527 (2010)
	2005
1		G. Verzellesi, Gaudenzio Meneghesso, Alessandro Chini, Enrico Zanoni, C. Canali: DC-to-RF dispersion effects in GaAs- and GaN-based heterostructure FETs: performance and reliability issues. Microelectronics Reliability 45(9-11): 1585-1592 (2005)

Coauthor Index

1	Matteo Bonaiuti	[2]
2	C. Canali	[1]
3	Michele Esposto	[2]
4	Fausto Fantini	[2]
5	Valerio Di Lecce	[2]
6	Gaudenzio Meneghesso	[1] [2]
7	G. Verzellesi	[1]
8	Enrico Zanoni	[1] [2]

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