 | 2010 |
|---|
| 8 |       | W. S. Lau,
Peizhen Yang,
Eng Hua Lim,
Yee Ling Tang,
Seow Wei Lai,
V. L. Lo,
S. Y. Siah,
L. Chan:
Observation of halo implant from the drain side reaching the source side and vice versa in extremely short p-channel transistors.
Microelectronics Reliability 50(3): 346-350 (2010) |
| 2009 |
|---|
| 7 | | W. S. Lau,
Peizhen Yang,
Jason Zhiwei Chian,
V. Ho,
C. H. Loh,
S. Y. Siah,
L. Chan:
Drain current saturation at high drain voltage due to pinch off instead of velocity saturation in sub-100 nm metal-oxide-semiconductor transistors.
Microelectronics Reliability 49(1): 1-7 (2009) |
| 2008 |
|---|
| 6 | | W. S. Lau,
Peizhen Yang,
V. Ho,
L. F. Toh,
Y. Liu,
S. Y. Siah,
L. Chan:
An explanation of the dependence of the effective saturation velocity on gate voltage in sub-0.1 µm metal-oxide-semiconductor transistors by quasi-ballistic transport theory.
Microelectronics Reliability 48(10): 1641-1648 (2008) |
| 5 | | W. S. Lau,
Peizhen Yang,
C. W. Eng,
V. Ho,
C. H. Loh,
S. Y. Siah,
D. Vigar,
L. Chan:
A study of the linearity between Ion and log Ioff of modern MOS transistors and its application to stress engineering.
Microelectronics Reliability 48(4): 497-503 (2008) |
| 4 | | W. S. Lau,
K. S. See,
C. W. Eng,
W. K. Aw,
K. H. Jo,
K. C. Tee,
James Y. M. Lee,
Elgin K. B. Quek,
H. S. Kim,
Simon T. H. Chan,
L. Chan:
Anomalous narrow width effect in p-channel metal-oxide-semiconductor surface channel transistors using shallow trench isolation technology.
Microelectronics Reliability 48(6): 919-922 (2008) |
| 2004 |
|---|
| 3 | | L. Chan,
E. S. Cheb-Terrab:
Non-liouvillian solutions for second order Linear ODEs.
ISSAC 2004: 80-86 |
| 1994 |
|---|
| 2 | | Kin Mun Lye,
L. Chan,
Kee Chaing Chua:
Performance of a network protocol processor.
Computer Communications 17(11): 771-776 (1994) |
| 1991 |
|---|
| 1 | | S. R. Li,
L. Chan,
J. Thorn,
D. J. Galton,
J. Stocks:
Bcl-1 RFLP at the human hepatic lipase gene locus (CIPC).
Nucleic Acids Research 19(1): 197 (1991) |
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