Antonio Cerdeira

	2011
13		V. S. Balderrama, Magali Estrada, Antonio Cerdeira, B. S. Soto-Cruz, L. F. Marsal, J. Pallares, J. C. Nolasco, Benjamín Iñíguez, E. Palomares, J. Albero: Influence of P3HT: PCBM blend preparation on the active layer morphology and cell degradation. Microelectronics Reliability 51(3): 597-601 (2011)
	2010
12		J. E. Conde, Antonio Cerdeira: 3D structure simulation and proceeding to extract mobility parameters for FinFETs varying channel length. CCE 2010: 591-594
	2008
11		Rodrigo Trevisoli Doria, Antonio Cerdeira, Jean-Pierre Raskin, Denis Flandre, Marcelo Antonio Pavanello: Harmonic distortion analysis of double gate graded-channel MOSFETs operating in saturation. Microelectronics Journal 39(12): 1663-1670 (2008)
10		J. C. Tinoco, Magali Estrada, Benjamín Iñíguez, Antonio Cerdeira: Conduction mechanisms of silicon oxide/titanium oxide MOS stack structures. Microelectronics Reliability 48(3): 370-381 (2008)
	2007
9		Joaquín Alvarado, Antonio Cerdeira, Valeria Kilchytska, Denis Flandre: Harmonic distortion analysis using an improved charge sheet model for PD SOI MOSFETs. Microelectronics Journal 38(3): 321-326 (2007)
	2005
8		Magali Estrada, Antonio Cerdeira, L. Resendiz, Benjamín Iñíguez, L. F. Marzal, J. Pallares: Effect of localized traps on the anomalous behavior of the transconductance in nanocrystalline TFTs. Microelectronics Reliability 45(7-8): 1161-1166 (2005)
	2003
7		Magali Estrada, A. Afzalian, Denis Flandre, Antonio Cerdeira, H. Baez, A. de Lucca: FD MOS SOI circuit to enhance the ratio of illuminated to dark current of a co-integrated a-Si: H photodiode. Microelectronics Reliability 43(2): 189-193 (2003)
6		R. García, Magali Estrada, Antonio Cerdeira: Effects of impurity concentration, hydrogen plasma process and crystallization temperature on poly-crystalline films obtained from PECVD a-Si: H layers. Microelectronics Reliability 43(8): 1281-1287 (2003)
	2002
5		F. S. Lomeli, Antonio Cerdeira: Precise SPICE macromodel applied to high-voltage power MOSFET. Microelectronics Reliability 42(1): 149-152 (2002)
4		Rodolfo Quintero, Antonio Cerdeira, Adelmo Ortiz-Conde: Quasi-three-dimensional spice-based simulation of the transient behavior, including plasma spread, of thyristors and over-voltage protectors. Microelectronics Reliability 42(1): 67-76 (2002)
3		Juin J. Liou, R. Shireen, Adelmo Ortiz-Conde, Francisco J. García-Sánchez, Antonio Cerdeira, Xiaofang Gao, Xuecheng Zou, Ching-Sung Ho: Influence of polysilicon-gate depletion on the subthreshold behavior of submicron MOSFETs. Microelectronics Reliability 42(3): 343-347 (2002)
2		Adelmo Ortiz-Conde, Francisco J. García-Sánchez, Juin J. Liou, Antonio Cerdeira, Magali Estrada, Y. Yue: A review of recent MOSFET threshold voltage extraction methods. Microelectronics Reliability 42(4-5): 583-596 (2002)
	2001
1		Magali Estrada, Antonio Cerdeira, Adelmo Ortiz-Conde, Francisco J. García-Sánchez: Determination of trap cross-section in a-Si: H p-i-n diodes parameters using simulation and parameter extraction. Microelectronics Reliability 41(4): 605-610 (2001)

Coauthor Index

1	A. Afzalian	[7]
2	J. Albero	[13]
3	Joaquín Alvarado	[9]
4	H. Baez	[7]
5	V. S. Balderrama	[13]
6	J. E. Conde	[12]
7	Rodrigo Trevisoli Doria	[11]
8	Magali Estrada	[1] [2] [6] [7] [8] [10] [13]
9	Denis Flandre	[7] [9] [11]
10	Xiaofang Gao	[3]
11	R. García	[6]
12	Francisco J. García-Sánchez	[1] [2] [3]
13	Ching-Sung Ho	[3]
14	Benjamín Iñíguez	[8] [10] [13]
15	Valeria Kilchytska	[9]
16	Juin J. Liou	[2] [3]
17	F. S. Lomeli	[5]
18	A. de Lucca	[7]
19	L. F. Marsal	[13]
20	L. F. Marzal	[8]
21	J. C. Nolasco	[13]
22	Adelmo Ortiz-Conde	[1] [2] [3] [4]
23	J. Pallares	[8] [13]
24	E. Palomares	[13]
25	Marcelo Antonio Pavanello	[11]
26	Rodolfo Quintero	[4]
27	Jean-Pierre Raskin	[11]
28	L. Resendiz	[8]
29	R. Shireen	[3]
30	B. S. Soto-Cruz	[13]
31	J. C. Tinoco	[10]
32	Y. Yue	[2]
33	Xuecheng Zou	[3]

Colors in the list of coauthors

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