P. Canet

	2009
5		J. Postel-Pellerin, F. Lalande, P. Canet, Rachid Bouchakour, F. Jeuland, B. Bertello, B. Villard: Extraction of 3D parasitic capacitances in 90 nm and 22 nm NAND flash memories. Microelectronics Reliability 49(9-11): 1056-1059 (2009)
4		J. Postel-Pellerin, F. Lalande, P. Canet, Rachid Bouchakour, F. Jeuland, L. Morancho: Modeling charge variation during data retention of MLC Flash memories. Microelectronics Reliability 49(9-11): 1060-1063 (2009)
	2002
3		R. Laffont, J. Razafindramora, P. Canet, Rachid Bouchakour, J. M. Mirabel: Decreasing EEPROM Programming Bias With Negative Voltage, Reliability Impact. MTDT 2002: 168-176
	2001
2		Rachid Bouchakour, N. Harabech, P. Canet, Ph. Boivin, J. M. Mirabel: Modeling of a floating-gate EEPROM cell using a charge sheet approach including variable tunneling capacitance and polysilicon gate depletion effect. ISCAS (4) 2001: 822-825
1		P. Canet, Rachid Bouchakour, N. Harabech, Ph. Boivin, J. M. Mirabel: EEPROM programming study-time and degradation aspects. ISCAS (4) 2001: 846-849

Coauthor Index

1	B. Bertello	[5]
2	Ph. Boivin	[1] [2]
3	Rachid Bouchakour	[1] [2] [3] [4] [5]
4	N. Harabech	[1] [2]
5	F. Jeuland	[4] [5]
6	R. Laffont	[3]
7	F. Lalande	[4] [5]
8	J. M. Mirabel	[1] [2] [3]
9	L. Morancho	[4]
10	J. Postel-Pellerin	[4] [5]
11	J. Razafindramora	[3]
12	B. Villard	[5]

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