Alexander N. Bubennikov

	2001
1		Alexander N. Bubennikov, Andrey V. Zykov: Investigations of impact ionization phenomena in advanced transistors and speed-power improvement of BiMOS SRAM cells based on reverse base current effect. Microelectronics Reliability 41(2): 219-228 (2001)

Coauthor Index

1

Andrey V. Zykov

[1]

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