S. Bruyère

	2008
13		G. Beylier, S. Bruyère, D. Benoit, G. Ghibaudo: Impact of silicon nitride CESL on NLDEMOS transistor reliability. Microelectronics Reliability 48(8-9): 1539-1543 (2008)
	2007
12		G. Beylier, S. Bruyère, D. Benoit, G. Ghibaudo: Refined electrical analysis of two charge states transition characteristic of "borderless" silicon nitride. Microelectronics Reliability 47(4-5): 743-747 (2007)
	2005
11		G. Ribes, S. Bruyère, M. Denais, F. Monsieur, V. Huard, D. Roy, G. Ghibaudo: Multi-vibrational hydrogen release: Physical origin of Tbd, Qbd power-law voltage dependence of oxide breakdown in ultra-thin gate oxides. Microelectronics Reliability 45(12): 1842-1854 (2005)
10		G. Ribes, S. Bruyère, M. Denais, D. Roy, G. Ghibaudo: Evidence and modelling current dependence of defect generation probability and its impact on charge to breakdown. Microelectronics Reliability 45(5-6): 841-844 (2005)
9		E. Deloffre, L. Montès, G. Ghibaudo, S. Bruyère, S. Blonkowski, S. Bécu, M. Gros-Jean, S. Crémer: Electrical properties in low temperature range (5K-300K) of Tantalum Oxide dielectric MIM capacitors. Microelectronics Reliability 45(5-6): 925-928 (2005)
	2003
8		F. Monsieur, E. Vincent, V. Huard, S. Bruyère, D. Roy, Thomas Skotnicki, G. Pananakakis, G. Ghibaudo: On the role of holes in oxide breakdown mechanism in inverted nMOSFETs. Microelectronics Reliability 43(8): 1199-1202 (2003)
7		G. Ribes, S. Bruyère, F. Monsieur, D. Roy, V. Huard: New insights into the change of voltage acceleration and temperature activation of oxide breakdown. Microelectronics Reliability 43(8): 1211-1214 (2003)
6		C. Besset, S. Bruyère, S. Blonkowski, S. Crémer, E. Vincent: MIM capacitance variation under electrical stress. Microelectronics Reliability 43(8): 1237-1240 (2003)
	2002
5		D. Roy, S. Bruyère, E. Vincent, F. Monsieur: Series resistance and oxide thickness spread influence on Weibull breakdown distribution: New experimental correction for reliability projection improvement. Microelectronics Reliability 42(9-11): 1497-1500 (2002)
4		F. Monsieur, E. Vincent, D. Roy, S. Bruyère, G. Pananakakis, G. Ghibaudo: Gate oxide Reliability assessment optimization. Microelectronics Reliability 42(9-11): 1505-1508 (2002)
	2001
3		S. Bruyère, D. Roy, E. Robilliart, E. Vincent, G. Ghibaudo: Body effect induced wear-out acceleration in ultra-thin oxides. Microelectronics Reliability 41(7): 1031-1034 (2001)
2		F. Monsieur, E. Vincent, D. Roy, S. Bruyère, G. Pananakakis, G. Ghibaudo: Determination of Dielectric Breakdown Weibull Distribution Parameters Confidence Bounds for Accurate Ultrathin Oxide Reliability Predictions. Microelectronics Reliability 41(9-10): 1295-1300 (2001)
1		S. Bruyère, F. Monsieur, D. Roy, E. Vincent, G. Ghibaudo: Failures in ultrathin oxides: Stored energy or carrier energy driven? Microelectronics Reliability 41(9-10): 1367-1372 (2001)

Coauthor Index

1	S. Bécu	[9]
2	D. Benoit	[12] [13]
3	C. Besset	[6]
4	G. Beylier	[12] [13]
5	S. Blonkowski	[6] [9]
6	S. Crémer	[6] [9]
7	E. Deloffre	[9]
8	M. Denais	[10] [11]
9	Gérard Ghibaudo (G. Ghibaudo)	[1] [2] [3] [4] [8] [9] [10] [11] [12] [13]
10	M. Gros-Jean	[9]
11	V. Huard	[7] [8] [11]
12	F. Monsieur	[1] [2] [4] [5] [7] [8] [11]
13	L. Montès	[9]
14	G. Pananakakis	[2] [4] [8]
15	G. Ribes	[7] [10] [11]
16	E. Robilliart	[3]
17	D. Roy	[1] [2] [3] [4] [5] [7] [8] [10] [11]
18	Thomas Skotnicki	[8]
19	E. Vincent	[1] [2] [3] [4] [5] [6] [8]

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