M. J. S. P. Brasil

	2005
3		I. Camps, A. Vercik, Y. Galvão Gobato, M. J. S. P. Brasil, G. E. Marques, S. S. Makler: Negative charged excitons in double barrier diodes. Microelectronics Journal 36(11): 1038-1040 (2005)
2		Y. Galvão Gobato, M. J. S. P. Brasil, I. Camps, H. B. de Carvalho, L. F. dos Santos, G. E. Marques, M. Henini, L. Eaves, G. Hill: Charge buildup effects in asymmetric p-type resonant tunneling diodes. Microelectronics Journal 36(3-6): 356-358 (2005)
	2003
1		A. Vercik, Y. Galvão Gobato, M. J. S. P. Brasil: Formation dynamics of neutral and negatively charged excitons in double barrier resonant tunnelling structures. Microelectronics Journal 34(5-8): 659-661 (2003)

Coauthor Index

1	I. Camps	[2] [3]
2	H. B. de Carvalho	[2]
3	L. Eaves	[2]
4	Y. Galvão Gobato	[1] [2] [3]
5	M. Henini	[2]
6	G. Hill	[2]
7	S. S. Makler	[3]
8	G. E. Marques	[2] [3]
9	L. F. dos Santos	[2]
10	A. Vercik	[1] [3]

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