 | 2011 |
|---|
| 7 |       | A. Oukaour,
Boubekeur Tala-Ighil,
B. Pouderoux,
M. Tounsi,
M. Bouarroudj-Berkani,
Stéphane Lefebvre,
B. Boudart:
Ageing defect detection on IGBT power modules by artificial training methods based on pattern recognition.
Microelectronics Reliability 51(2): 386-391 (2011) |
| 6 | | F. Berthet,
Y. Guhel,
H. Gualous,
B. Boudart,
J. L. Trolet,
M. Piccione,
C. Gaquiére:
Characterization of the self-heating of AlGaN/GaN HEMTs during an electrical stress by using Raman spectroscopy.
Microelectronics Reliability 51(9-11): 1796-1800 (2011) |
| 2010 |
|---|
| 5 | | H. Gualous,
R. Gallay,
G. Alcicek,
Boubekeur Tala-Ighil,
A. Oukaour,
B. Boudart,
Ph. Makany:
Supercapacitor ageing at constant temperature and constant voltage and thermal shock.
Microelectronics Reliability 50(9-11): 1783-1788 (2010) |
| 4 | | M. Tounsi,
A. Oukaour,
Boubekeur Tala-Ighil,
H. Gualous,
B. Boudart,
D. Aissani:
Characterization of high-voltage IGBT module degradations under PWM power cycling test at high ambient temperature.
Microelectronics Reliability 50(9-11): 1810-1814 (2010) |
| 2006 |
|---|
| 3 | | Y. Guhel,
B. Boudart,
E. Delos,
M. Germain,
Z. Bougrioua:
Comparative studies of Pt and Ir schottky contacts on undoped Al0.36Ga0.64N.
Microelectronics Reliability 46(5-6): 786-793 (2006) |
| 2005 |
|---|
| 2 | | C. O. Maïga,
Hamid Toutah,
Boubekeur Tala-Ighil,
B. Boudart:
Trench insulated gate bipolar transistors submitted to high temperature bias stress.
Microelectronics Reliability 45(9-11): 1728-1731 (2005) |
| 2003 |
|---|
| 1 | | Hamid Toutah,
Boubekeur Tala-Ighil,
Jean-François Llibre,
B. Boudart,
Taieb Mohammed-Brahim,
Olivier Bonnaud:
Degradation in polysilicon thin film transistors related to the quality of the polysilicon material.
Microelectronics Reliability 43(9-11): 1531-1535 (2003) |
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