 | 2009 |
| 3 |  | M. Gassoumi,
J. M. Bluet,
C. Gaquière,
G. Guillot,
H. Maaref:
Deep levels and nonlinear characterization of AlGaN/GaN HEMTs on silicon carbide substrate.
Microelectronics Journal 40(8): 1161-1165 (2009) |
| 2008 |
| 2 |  | H. Benmaza,
B. Akkal,
Hamza Abid,
J. M. Bluet,
Macho Anani,
Z. Bensaad:
Barrier height inhomogeneities in a Ni/SiC-6H Schottky n-type diode.
Microelectronics Journal 39(1): 80-84 (2008) |
| 2006 |
| 1 |  | N. Sghaier,
M. Trabelsi,
N. Yacoubi,
J. M. Bluet,
A. Souifi,
G. Guillot,
C. Gaquière,
J. C. DeJaeger:
Traps centers and deep defects contribution in current instabilities for AlGaN/GaN HEMT's on silicon and sapphire substrates.
Microelectronics Journal 37(4): 363-370 (2006) |