![]() | ![]() |
| 2009 | ||
|---|---|---|
| 2 | A. Touré, I. Halidou, Z. Benzarti, T. Boufaden: Growth temperature effect on MOVPE Si-doped GaN: Thermodynamic modeling. Microelectronics Journal 40(2): 363-366 (2009) | |
| 2004 | ||
| 1 | A. Rebey, M. M. Habchi, Z. Benzarti, B. El Jani: Study of GaAs layers grown on Ge substrates by MOVPE and in situ monitored by laser reflectometry. Microelectronics Journal 35(2): 179-184 (2004) | |
| 1 | T. Boufaden | [2] |
| 2 | M. M. Habchi | [1] |
| 3 | I. Halidou | [2] |
| 4 | B. El Jani | [1] |
| 5 | A. Rebey | [1] |
| 6 | A. Touré | [2] |
Data released under the ODC-BY 1.0 license — See also our legal information page