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| 2005 | ||
|---|---|---|
| 1 | D. Bauza, F. Rahmoune, R. Laqli, G. Ghibaudo: On the SILC mechanism in MOSFET's with ultrathin oxides. Microelectronics Reliability 45(5-6): 849-852 (2005) | |
| 1 | Gérard Ghibaudo (G. Ghibaudo) | [1] |
| 2 | R. Laqli | [1] |
| 3 | F. Rahmoune | [1] |
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