 | 2011 |
| 5 |  | Nadia Rezzak,
Michael L. Alles,
Ronald D. Schrimpf,
Sarah Kalemeris,
Lloyd W. Massengill,
John Sochacki,
Hugh J. Barnaby:
The sensitivity of radiation-induced leakage to STI topology and sidewall doping.
Microelectronics Reliability 51(5): 889-894 (2011) |
| 2009 |
| 4 |  | Sushmit Goswami,
Jason Silver,
Tino Copani,
Wenjian Chen,
Hugh J. Barnaby,
Bert Vermeire,
Sayfe Kiaei:
A 14mW 5Gb/s CMOS TIA with gain-reuse regulated cascode compensation for parallel optical interconnects.
ISSCC 2009: 100-101 |
| 3 |  | Hugh J. Barnaby,
Michael L. McLain,
Ivan S. Esqueda,
Xiao J. Chen:
Modeling Ionizing Radiation Effects in Solid State Materials and CMOS Devices.
IEEE Trans. on Circuits and Systems 56-I(8): 1870-1883 (2009) |
| 2008 |
| 2 |  | Federico Faccio,
Hugh J. Barnaby,
Xiao J. Chen,
Daniel M. Fleetwood,
Laura Gonella,
Michael L. McLain,
Ronald D. Schrimpf:
Total ionizing dose effects in shallow trench isolation oxides.
Microelectronics Reliability 48(7): 1000-1007 (2008) |
| 2005 |
| 1 |  | P. C. Adell,
Ronald D. Schrimpf,
C. R. Cirba,
W. T. Holman,
X. Zhu,
Hugh J. Barnaby,
O. Mion:
Single event transient effects in a voltage reference.
Microelectronics Reliability 45(2): 355-359 (2005) |