 | 2010 |
|---|
| 7 |       | M. Fakhri,
A.-K. Geinzer,
R. Heiderhoff,
L. J. Balk:
Nanoscale thermally induced stress analysis by complementary Scanning Thermal Microscopy techniques.
Microelectronics Reliability 50(9-11): 1459-1463 (2010) |
| 2009 |
|---|
| 6 | | A.-K. Tiedemann,
K. Kurz,
M. Fakhri,
R. Heiderhoff,
J. C. H. Phang,
L. J. Balk:
Finite element analyses assisted Scanning Joule Expansion Microscopy on interconnects for failure analysis and reliability investigations.
Microelectronics Reliability 49(9-11): 1165-1168 (2009) |
| 2008 |
|---|
| 5 | | D. Isakov,
A. A. B. Tio,
T. Geinzer,
J. C. H. Phang,
Y. Zhang,
L. J. Balk:
Near-field detection of photon emission from silicon with 30 nm spatial resolution.
Microelectronics Reliability 48(8-9): 1285-1288 (2008) |
| 2007 |
|---|
| 4 | | A. Pugatschow,
R. Heiderhoff,
L. J. Balk:
Time resolved determination of electrical field distributions within dynamically biased power devices by spectral EBIC investigations.
Microelectronics Reliability 47(9-11): 1529-1533 (2007) |
| 2006 |
|---|
| 3 | | L. J. Balk,
W. H. Gerling,
E. Wolfgang:
Editorial.
Microelectronics Reliability 46(9-11): 1401-1402 (2006) |
| 2002 |
|---|
| 2 | | T. H. Lee,
X. Guo,
G. D. Shen,
Y. Ji,
G. H. Wang,
J. Y. Du,
X. Z. Wang,
G. Gao,
A. Altes,
L. J. Balk:
Investigation of Tunnel-Regenerated Multi-Active-Region Light-Emitting Diodes (TRMAR LED) by Scanning Thermal Microscopy (STHM).
Microelectronics Reliability 42(9-11): 1711-1714 (2002) |
| 2001 |
|---|
| 1 |  | M. Zmeck,
J. C. H. Phang,
A. Bettiol,
T. Osipowicz,
F. Watt,
L. J. Balk,
F.-J. Niedernostheide,
Hans-Joachim Schulze,
E. Falck,
R. Barthelmess:
Analysis of high-power devices using proton beam induced charge microscopy.
Microelectronics Reliability 41(9-10): 1519-1524 (2001) |
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