 | 2009 |
|---|
| 7 |       | M. A. Exarchos,
G. J. Papaioannou,
Jalal Jomaah,
Francis Balestra:
Investigation of defects introduced by static and dynamic hot carrier stress on SOI partially depleted body-contact MOSFETs.
Microelectronics Reliability 49(9-11): 1018-1023 (2009) |
| 2006 |
|---|
| 6 | | A. Benfdila,
Francis Balestra:
On the drain current saturation in short channel MOSFETs.
Microelectronics Journal 37(7): 635-641 (2006) |
| 2005 |
|---|
| 5 | | M. A. Exarchos,
G. J. Papaioannou,
Jalal Jomaah,
Francis Balestra:
The impact of static and dynamic degradation on SOI "smart-cut" floating body MOSFETs.
Microelectronics Reliability 45(9-11): 1386-1389 (2005) |
| 2003 |
|---|
| 4 | | François Dieudonné,
Sébastien Haendler,
Jalal Jomaah,
Francis Balestra:
Low frequency noise in 0.12 mum partially and fully depleted SOI technology.
Microelectronics Reliability 43(2): 243-248 (2003) |
| 2002 |
|---|
| 3 | | B. Cretu,
Francis Balestra,
G. Ghibaudo,
G. Guégan:
Origin of hot carrier degradation in advanced nMOSFET devices.
Microelectronics Reliability 42(9-11): 1405-1408 (2002) |
| 2001 |
|---|
| 2 | | Sébastien Haendler,
Jalal Jomaah,
G. Ghibaudo,
Francis Balestra:
Improved analysis of low frequency noise in dynamic threshold MOS/SOI transistors.
Microelectronics Reliability 41(6): 855-860 (2001) |
| 1 |  | F. Dieudonné,
F. Daugé,
Jalal Jomaah,
C. Raynaud,
Francis Balestra:
An overview of hot-carrier induced degradation in 0.25 mum Partially and Fully Depleted SOI N-MOSFET's.
Microelectronics Reliability 41(9-10): 1417-1420 (2001) |
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