 | 2010 |
| 12 |  | J. Bourgeat,
Christophe Entringer,
Philippe Galy,
M. Bafleur,
D. Marin-Cudraz:
Evaluation of the ESD performance of local protections based on SCR or bi-SCR with dynamic or static trigger circuit in 32 nm.
Microelectronics Reliability 50(9-11): 1379-1382 (2010) |
| 2009 |
| 11 |  | M. Diatta,
E. Bouyssou,
D. Trémouilles,
P. Martinez,
F. Roqueta,
O. Ory,
M. Bafleur:
Failure mechanisms of discrete protection device subjected to repetitive electrostatic discharges (ESD).
Microelectronics Reliability 49(9-11): 1103-1106 (2009) |
| 2008 |
| 10 |  | Jinyu Ruan,
G. J. Papaioannou,
Nicolas Nolhier,
Nicolas Mauran,
M. Bafleur,
Fabio Coccetti,
Robert Plana:
ESD failure signature in capacitive RF MEMS switches.
Microelectronics Reliability 48(8-9): 1237-1240 (2008) |
| 2007 |
| 9 |  | A. Crosson,
L. Escotte,
M. Bafleur,
D. Talbourdet,
L. Crétinon,
Philippe Perdu,
G. Perez:
Long-term reliability of silicon bipolar transistors subjected to low constraints.
Microelectronics Reliability 47(9-11): 1590-1594 (2007) |
| 8 |  | Jinyu Ruan,
Nicolas Nolhier,
M. Bafleur,
L. Bary,
Fabio Coccetti,
T. Lisec,
Robert Plana:
Electrostatic discharge failure analysis of capacitive RF MEMS switches.
Microelectronics Reliability 47(9-11): 1818-1822 (2007) |
| 2006 |
| 7 |  | C. Lochot,
J. P. Lainé,
M. Bafleur,
A. Cazarré,
J. Tasselli:
Potentialities of substrate-thinning technique to control minority carrier injection in smart power IC's.
Microelectronics Journal 37(8): 804-811 (2006) |
| 6 |  | F. Essely,
F. Darracq,
Vincent Pouget,
M. Remmach,
Felix Beaudoin,
N. Guitard,
M. Bafleur,
Philippe Perdu,
André Touboul,
Dean Lewis:
Application of various optical techniques for ESD defect localization.
Microelectronics Reliability 46(9-11): 1563-1568 (2006) |
| 2005 |
| 5 |  | N. Guitard,
F. Essely,
D. Trémouilles,
M. Bafleur,
Nicolas Nolhier,
Philippe Perdu,
André Touboul,
Vincent Pouget,
Dean Lewis:
Different Failure signatures of multiple TLP and HBM Stresses in an ESD robust protection structure.
Microelectronics Reliability 45(9-11): 1415-1420 (2005) |
| 2003 |
| 4 |  | D. Trémouilles,
G. Bertrand,
M. Bafleur,
Felix Beaudoin,
Philippe Perdu,
N. Guitard,
L. Lescouzères:
TCAD and SPICE modeling help solve ESD protection issues in analog CMOS technology.
Microelectronics Reliability 43(1): 71-79 (2003) |
| 3 |  | T. Beauchêne,
Dean Lewis,
Felix Beaudoin,
Vincent Pouget,
Romain Desplats,
Pascal Fouillat,
Philippe Perdu,
M. Bafleur,
D. Trémouilles:
Thermal laser stimulation and NB-OBIC techniques applied to ESD defect localization.
Microelectronics Reliability 43(3): 439-444 (2003) |
| 2 |  | M. Zecri,
P. Besse,
P. Givelin,
M. Nayrolles,
M. Bafleur,
Nicolas Nolhier:
Determination of the ESD Failure Cause Through its Signature.
Microelectronics Reliability 43(9-11): 1551-1556 (2003) |
| 2001 |
| 1 |  | Romain Desplats,
Felix Beaudoin,
Philippe Perdu,
P. Poirier,
D. Trémouilles,
M. Bafleur,
Dean Lewis:
Backside Localization of Current Leakage Faults Using Thermal Laser Stimulation.
Microelectronics Reliability 41(9-10): 1539-1544 (2001) |