M. Badila

	2001
1		M. Badila, Philippe Godignon, José Millán, S. Berberich, G. Brezeanu: The electron irradiation effects on silicon gate dioxide used for power MOS devices. Microelectronics Reliability 41(7): 1015-1018 (2001)

Coauthor Index

1	S. Berberich	[1]
2	G. Brezeanu	[1]
3	Philippe Godignon	[1]
4	José Millán	[1]

Last update Sat May 26 04:23:17 2012 CET by the DBLP Team — Data released under the ODC-BY 1.0 license — See also our legal information page