E. Atanassova

	2012
11		E. Atanassova, Albena Paskaleva, D. Spassov: Doped Ta2O5 and mixed HfO2-Ta2O5 films for dynamic memories applications at the nanoscale. Microelectronics Reliability 52(4): 642-650 (2012)
	2011
10		D. Spassov, E. Atanassova, Albena Paskaleva: Lightly Al-doped Ta2O5: Electrical properties and mechanisms of conductivity. Microelectronics Reliability 51(12): 2102-2109 (2011)
	2010
9		E. Atanassova, N. Novkovski, Albena Paskaleva, D. Spassov: Constant current stress-induced leakage current in mixed HfO2-Ta2O5 stacks. Microelectronics Reliability 50(6): 794-800 (2010)
	2008
8		E. Atanassova, Albena Paskaleva, N. Novkovski: Effects of the metal gate on the stress-induced traps in Ta2O5/SiO2 stacks. Microelectronics Reliability 48(4): 514-525 (2008)
7		E. Atanassova, Ninoslav Stojadinovic, Albena Paskaleva: Degradation behavior of Ta2O5 stacks and its dependence on the gate electrode. Microelectronics Reliability 48(8-9): 1193-1197 (2008)
	2007
6		E. Atanassova, D. Spassov, Albena Paskaleva: Metal gates and gate-deposition-induced defects in Ta2O5 stack capacitors. Microelectronics Reliability 47(12): 2088-2093 (2007)
5		E. Atanassova, Albena Paskaleva: Challenges of Ta2O5 as high-k dielectric for nanoscale DRAMs. Microelectronics Reliability 47(6): 913-923 (2007)
	2005
4		E. Atanassova, R. V. Konakova, V. F. Mitin, J. Koprinarova, O. S. Lytvym, O. B. Okhrimenko, V. V. Schinkarenko, D. Virovska: Effect of microwave radiation on the properties of Ta2O5-Si microstructures. Microelectronics Reliability 45(1): 123-135 (2005)
	2003
3		M. Pecovska-Gjorgjevich, N. Novkovski, E. Atanassova: Electrical properties of thin RF sputtered Ta2O5 films after constant current stress. Microelectronics Reliability 43(2): 235-241 (2003)
	2002
2		E. Atanassova, Albena Paskaleva: Breakdown fields and conduction mechanisms in thin Ta2O5 layers on Si for high density DRAMs. Microelectronics Reliability 42(2): 157-173 (2002)
1		E. Atanassova, Dejan Spasov: Thermal Ta2O5--alternative to SiO2 for storage capacitor application. Microelectronics Reliability 42(8): 1171-1177 (2002)

Coauthor Index

1	R. V. Konakova	[4]
2	J. Koprinarova	[4]
3	O. S. Lytvym	[4]
4	V. F. Mitin	[4]
5	N. Novkovski	[3] [8] [9]
6	O. B. Okhrimenko	[4]
7	Albena Paskaleva	[2] [5] [6] [7] [8] [9] [10] [11]
8	M. Pecovska-Gjorgjevich	[3]
9	V. V. Schinkarenko	[4]
10	Dejan Spasov	[1]
11	D. Spassov	[6] [9] [10] [11]
12	Ninoslav Stojadinovic	[7]
13	D. Virovska	[4]

Colors in the list of coauthors

Last update Sat May 26 04:23:17 2012 CET by the DBLP Team — Data released under the ODC-BY 1.0 license — See also our legal information page