 | 2010 |
|---|
| 7 |       | Yusuke Ikawa,
Yorihide Yuasa,
Cheng-Yu Hu,
Jin-Ping Ao,
Yasuo Ohno:
2D Device Simulation of AlGaN/GaN HFET Current Collapse Caused by Surface Negative Charge Injection.
IEICE Transactions 93-C(8): 1218-1224 (2010) |
| 6 | | Cheng-Yu Hu,
Katsutoshi Nakatani,
Hiroji Kawai,
Jin-Ping Ao,
Yasuo Ohno:
Buffer Layer Doping Concentration Measurement Using VT-VSUB Characteristics of GaN HEMT with p-GaN Substrate Layer.
IEICE Transactions 93-C(8): 1234-1237 (2010) |
| 2008 |
|---|
| 5 | | Jin-Ping Ao,
Yuya Yamaoka,
Masaya Okada,
Cheng-Yu Hu,
Yasuo Ohno:
Investigation on Current Collapse of AlGaN/GaN HFET by Gate Bias Stress.
IEICE Transactions 91-C(7): 1004-1008 (2008) |
| 4 | | Cheng-Yu Hu,
Jin-Ping Ao,
Masaya Okada,
Yasuo Ohno:
A Study on Ohmic Contact to Dry-Etched p-GaN.
IEICE Transactions 91-C(7): 1020-1024 (2008) |
| 2006 |
|---|
| 3 | | Daigo Kikuta,
Jin-Ping Ao,
Junya Matsuda,
Yasuo Ohno:
A Mechanism of Enhancement-Mode Operation of AlGaN/GaN MIS-HFET.
IEICE Transactions 89-C(7): 1031-1036 (2006) |
| 2 | | Masaya Okada,
Ryohei Takaki,
Daigo Kikuta,
Jin-Ping Ao,
Yasuo Ohno:
Temperature and Illumination Dependence of AlGaN/GaN HFET Threshold Voltage.
IEICE Transactions 89-C(7): 1042-1046 (2006) |
| 2005 |
|---|
| 1 | | Daigo Kikuta,
Jin-Ping Ao,
Yasuo Ohno:
Evaluation of Surface States of AlGaN/GaN HFET Using Open-Gated Structure.
IEICE Transactions 88-C(4): 683-689 (2005) |
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