 | 2011 |
| 6 |  | S. Demirezen,
S. Altindal,
S. Özçelik,
E. Özbay:
On the profile of frequency and voltage dependent interface states and series resistance in (Ni/Au)/Al0.22Ga0.78N/AlN/GaN heterostructures by using current-voltage (I-V) and admittance spectroscopy methods.
Microelectronics Reliability 51(12): 2153-2162 (2011) |
| 5 |  | Z. Tekeli,
M. Gökçen,
S. Altindal,
S. Özçelik,
E. Özbay:
On the profile of frequency dependent dielectric properties of (Ni/Au)/GaN/Al0.3Ga0.7N heterostructures.
Microelectronics Reliability 51(3): 581-586 (2011) |
| 2010 |
| 4 |  | Ilbilge Dökme,
S. Altindal,
T. Tunç,
I. Uslu:
Temperature dependent electrical and dielectric properties of Au/polyvinyl alcohol (Ni, Zn-doped)/n-Si Schottky diodes.
Microelectronics Reliability 50(1): 39-44 (2010) |
| 2009 |
| 3 |  | H. Altuntas,
S. Altindal,
H. Shtrikman,
S. Özçelik:
A detailed study of current-voltage characteristics in Au/SiO2/n-GaAs in wide temperature range.
Microelectronics Reliability 49(8): 904-911 (2009) |
| 2004 |
| 2 |  | N. Tugluoglu,
S. Altindal,
A. Tataroglu,
S. Karadeniz:
Dielectric properties in Au/SnO2/n-Si (MOS) structures irradiated under 60Co-gamma rays.
Microelectronics Journal 35(9): 731-738 (2004) |
| 2003 |
| 1 |  | A. Tataroglu,
S. Altindal,
S. Karadeniz,
N. Tugluoglu:
Au/SnO2/n-Si (MOS) structures response to radiation and frequency.
Microelectronics Journal 34(11): 1043-1049 (2003) |