 | 2011 |
|---|
| 4 |       | Sona P. Kumar,
Anju Agrawal,
Rishu Chaujar,
R. S. Gupta,
Mridula Gupta:
Device linearity and intermodulation distortion comparison of dual material gate and conventional AlGaN/GaN high electron mobility transistor.
Microelectronics Reliability 51(3): 587-596 (2011) |
| 2008 |
|---|
| 3 | | Sona P. Kumar,
Anju Agrawal,
Rishu Chaujar,
Mridula Gupta,
R. S. Gupta:
Performance assessment and sub-threshold analysis of gate material engineered AlGaN/GaN HEMT for enhanced carrier transport efficiency.
Microelectronics Journal 39(12): 1416-1424 (2008) |
| 2007 |
|---|
| 2 | | Sona P. Kumar,
Anju Agrawal,
Rishu Chaujar,
Sneha Kabra,
Mridula Gupta,
R. S. Gupta:
Threshold voltage model for small geometry AlGaN/GaN HEMTs based on analytical solution of 3-D Poisson's equation.
Microelectronics Journal 38(10-11): 1013-1020 (2007) |
| 2006 |
|---|
| 1 | | Sona P. Kumar,
Anju Agrawal,
Sneha Kabra,
Mridula Gupta,
R. S. Gupta:
An analysis for AlGaN/GaN modulation doped field effect transistor using accurate velocity-field dependence for high power microwave frequency applications.
Microelectronics Journal 37(11): 1339-1346 (2006) |
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