Victor Martin Agostinelli Jr.

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1993

2 C. Patrick Yue, Victor Martin Agostinelli Jr., Gregory Munson Yeric, A. F. Tasch Jr.: Improved universal MOSFET electron mobility degradation models for circuit simulation. IEEE Trans. on CAD of Integrated Circuits and Systems 12(10): 1542-1546 (1993)

1 Victor Martin Agostinelli Jr., Greg M. Yeric, A. F. Tasch Jr.: Universal MOSFET hole mobility degradation models for circuit simulation. IEEE Trans. on CAD of Integrated Circuits and Systems 12(3): 439-445 (1993)

	1993
2		C. Patrick Yue, Victor Martin Agostinelli Jr., Gregory Munson Yeric, A. F. Tasch Jr.: Improved universal MOSFET electron mobility degradation models for circuit simulation. IEEE Trans. on CAD of Integrated Circuits and Systems 12(10): 1542-1546 (1993)
1		Victor Martin Agostinelli Jr., Greg M. Yeric, A. F. Tasch Jr.: Universal MOSFET hole mobility degradation models for circuit simulation. IEEE Trans. on CAD of Integrated Circuits and Systems 12(3): 439-445 (1993)

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